PART |
Description |
Maker |
IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A 200V N-Channel MOSFET
|
Fairchild Semiconductor
|
IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI19N20C FQB19N20C FQB19N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
SFR9210 SFU9210 SFR9210F SFU9210TUAM002 |
200V P-Channel A-FET Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQU630 FQD630 FQD630TM |
200V N-Channel QFET 200V N-Channel MOSFET(N沟道增强型MOS场效应管(漏电流7A, 漏源电压200V,导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IRL630A IRL630ANL |
200V N-Channel Logic Level A-FET / Substitute of IRL630 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
IRHNA57260 IRHNA54260 IRHNA58260 IRHNA57060 IRHNA5 |
200V N-CHANNEL RADIATION HARDENED POWER MOSFET 200V, N-CHANNEL
|
IRF[International Rectifier]
|
FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET 200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
FQU12N20L FQD12N20L FQU12N20 FQD12N20LTF FQD12N20L |
200V N-Channel Logic Level QFET 200V LOGIC N-Channel MOSFET 9 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200V9A条,沟道,功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|